Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems

V. V. Polyakova; Полякова В. В.; A. V. Saenko; Саенко А. В.; I. N. Kots; Коц И. Н.; A. V. Kovalev; Ковалев А. В.

doi:10.31857/S0544126924010069

Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems

Autores: Polyakova V.V.¹, Saenko A.V.¹, Kots I.N.¹, Kovalev A.V.¹
Afiliações:
1. Southern Federal University
Edição: Volume 53, Nº 1 (2024)
Páginas: 58-63
Seção: INSTRUMENTATION
URL: https://rjeid.com/0544-1269/article/view/655246
DOI: https://doi.org/10.31857/S0544126924010069
ID: 655246

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Resumo
Sobre autores
Bibliografia
Arquivos suplementares
Estatísticas

Resumo

This article presents the results of experimental studies of structures formed on the basis of the crossbar architecture of memristor structures made of various materials. TiO₂ was used as a working memristor layer. The following materials were used for the contact pads: Al, Ni, Cr, Mo, Ta, Ag. In the course of experimental studies, the optimal combination of materials for the formation of crossbar memristor structures was revealed, which in the future can be used in devices of neuromorphic artificial intelligence systems.

Palavras-chave

memristor, crossbar architecture, neuromorphic systems, magnetron sputtering, atomic force microscopy

Bibliografia

Proydakov E.M. Современное состояние исследований в области искусственного интеллекта // Digital economy. 2018. T. 3. No. 3. P. 50.
Gafarov F.M. Artificial neural networks and applications. Kazan: Kazan, 2018.
Zidan M.A., Strachan J.P., Lu W.D. The future of electronics based on memristive systems // Nat. Electron. 2018. V. 1. P. 22.
Kozhukhov A.S., Scheglov D.V., Fedina L.I., Latyshev A.V. The initial stages of atomic force microscope based local anodic oxidation of silicon AIP Advances 8, 025113 (2018). https://doi.org/10.1063/1.5007914
Colangelo F., Piazza V., Coletti С., Roddaro S., Beltram F., Pingue P. Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate. 2 May 2018. https://doi.org/10.1088/1361-6528/aa59c7.
Polyakova V.V., Saenko A.V. Local Anodic Oxidation for Crossbar-Array Architecture Technical Physics. 2022. V. 92. No. 8. Р. 1159–1165.
Rozanov R.Yu., Kondrashov V.A., Nevolin V.K., Chaplygin Yu. A. Development and research of memristors based on metal films of nanoscale thickness // Nanoengineering. 2014. No. 2. Р. 22–28.
Choi B.J., Torrezan A.C., Norris K.J., Miao F. Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch // Nano Lett. 2013. № 13 (7). Р. 3213–3217.