Мақаланы E-mail арқылы жіберу On a shape of band-to-acceptor luminescence line in semiconductors
- Авторлар: Kokurin I.A.1,2, Averkiev N.S.1
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Мекемелер:
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- National Research Ogarev Mordovia State University
- Шығарылым: Том 87, № 6 (2023)
- Беттер: 849-854
- Бөлім: Articles
- URL: https://rjeid.com/0367-6765/article/view/654384
- DOI: https://doi.org/10.31857/S0367676523701478
- EDN: https://elibrary.ru/VLVYLH
- ID: 654384
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Аннотация
A theoretical explanation is proposed for the shape of the long-wavelength edge of the luminescence line, which is caused by the recombination of a free electron and a hole of a neutral acceptor. The formation of complexes, in which a single hole is localized by the field of two attracting ions (\(A_{2}^{ - }\) complexes) and the subsequent recombination of holes in such complexes with electrons of the conduction band are considered. The Coulomb repulsion in the final state after recombination and the dispersion of the complexes in terms of the interionic distance provide an extended long-wavelength tail of the luminescence line, comparable in magnitude to the ionization energy of a single acceptor.
Авторлар туралы
I. Kokurin
Ioffe Physical-Technical Institute of the Russian Academy of Sciences; National Research Ogarev Mordovia State University
Хат алмасуға жауапты Автор.
Email: ivan.a.kokurin@gmail.com
Russia, 194021, St. Petersburg,; Russia, 430005, Saransk
N. Averkiev
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: ivan.a.kokurin@gmail.com
Russia, 194021, St. Petersburg,
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