Photon detectors and emitters for quantum communication systems and quantum frequency standards

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Abstract

We presented a brief overview of the results obtained at the Rzhanov Institute of Semiconductor Physics of SB RAS in the field of the development of photon detectors and emitters promising for use in quantum cryptography systems and miniature quantum frequency standards based on the effect of coherent population trapping.

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About the authors

V. V. Preobrazhenskii

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Author for correspondence.
Email: pvv@isp.nsc.ru
Russian Federation, Novosibirsk

I. B. Chistokhin

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: pvv@isp.nsc.ru
Russian Federation, Novosibirsk

I. I. Ryabtsev

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: pvv@isp.nsc.ru
Russian Federation, Novosibirsk

V. A. Haisler

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: pvv@isp.nsc.ru
Russian Federation, Novosibirsk

A. I. Toropov

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: pvv@isp.nsc.ru
Russian Federation, Novosibirsk

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Supplementary files

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2. Fig. 1. The design of the developed OLFD.

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3. Fig. 2. The appearance of the OLFD chip, the working pad is on the left, the contact pad is on the right (a), the OLFD module (b), dark current-voltage characteristics of the OLFD samples (c), the dependence of the dark counting frequency DCR on the overvoltage value Vb (d).

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4. Fig. 3. AFM topogram of the structure with Al0.1In0.9As QD (a), the spectral range of emission of AlxIn1–xAs QD of different compositions at T = 295 K (b), the microluminescence spectrum of a single Al0.2In0.8As QD at T = 10 K (c), the dependence g2(t) demonstrating the sub-Poisson type of QD emission statistics (d).

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5. Fig. 4. The initial laser structure grown by the MBE method, scanning electron microscopy data (a), micrograph of the 300x300 µm laser chip (b), watt-ampere characteristic of the LVR (c), laser emission spectrum (d), dependences of the LVR generation wavelength on temperature and pump current (d).

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