Broadband rectification of microwave current in magnetic tunnel junctions with perpendicular magnetic anisotropy

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Abstract

We experimentally studied the effect of broadband rectification of microwave current in magnetic tunnel junctions with perpendicular magnetic anisotropy with using the method of spin-transfer ferromagnetic resonance in a planar external magnetic field. It was found that the parameters of broadband rectification (frequency range, rectified voltage value and the region of existence of the ferromagnetic resonance mode) depend on the size of the sample and its shape. The maximum value of the rectified voltage was on a round elliptical sample of 100×150 nm. At the same time, the widest operating frequency range of approximately 2 GHz was observed on strongly elliptical MTJs with the size of 75×250 nm.

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About the authors

K. V. Kiseleva

New Spintronic Technologies LLC; Skolkovo Institute of Science and Technology (Skoltech)

Author for correspondence.
Email: kseniia.kiseleva@skoltech.ru

Russian Quantum Center

Russian Federation, Skolkovo; Skolkovo

G. A. Kichin

New Spintronic Technologies LLC

Email: kseniia.kiseleva@skoltech.ru

Russian Quantum Center

Russian Federation, Skolkovo

P. N. Skirdkov

New Spintronic Technologies LLC; Prokhorov General Physics Institute of the Russian Academy of Science

Email: kseniia.kiseleva@skoltech.ru

Russian Quantum Center

Russian Federation, Skolkovo; Moscow

K. A. Zvezdin

New Spintronic Technologies LLC; Prokhorov General Physics Institute of the Russian Academy of Science

Email: kseniia.kiseleva@skoltech.ru
Russian Federation, Skolkovo; Moscow

References

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2. Fig. 1. Composition of the magnetic tunnel junction (a); Scheme of the spin-transfer ferromagnetic resonance method (b).

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3. Fig. 2. Graphs of the dependence of resistance on the field for a round 75 nm diameter MTP (a), a round 125 nm diameter MTP (b), a round 200 nm diameter MTP (c), an elliptical 75×125 nm2 diameter MTP (d), an elliptical 100×150 nm2 diameter MTP (d), an elliptical 75×250 nm2 diameter MTP (e).

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4. Fig. 3. Graphs of the dependence of the rectified voltage on the frequency of the microwave current and the external field for a round MTP with a diameter of 75 nm (a), a round MTP with a diameter of 125 nm (b), a round MTP with a diameter of 200 nm (c), an elliptical MTP with a size of 75×125 nm2 (d), an elliptical MTP with a size of 100×150 nm2 (d), and an elliptical MTP with a size of 75×250 nm2 (e).

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5. Fig. 4. Graphs of the dependence of the rectified voltage on the microwave current frequency at fixed values ​​of the external field for elliptical MTPs of size 75×125 nm2 (a), 100×150 nm2 (b), 75×250 nm2 (c), 75×125 nm2 (d) at a field strength of H = –450 Oe, 100×150 nm2 at H = –300 Oe (d), 75×250 nm2 at H = –460 Oe (e).

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6. Fig. 5. Graphs of the dependence of the rectified voltage on the microwave current frequency at fixed values ​​of the external field for round MTPs with a diameter of 75 (a), 125 (b), 200 (c), 75 nm at a field strength of H = 250 Oe (d), 125 nm at H = –200 Oe (d), 200 nm at H = –40 Oe (e).

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