Production and electronic transport in thin films of strontium iridate

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The results of the study of epitaxial thin films of SrIrO3 are presented, data on growth technology, crystal structure and electronic transport are presented. In SrIrO3 films received in a mixture of Ar and O2 gases, the dependence of resistance on temperature has a metallic character. For the films deposited in pure argon, the resistance versus temperature curves shows both a metallic and a dielectric behavior. It depends on the deposition pressure and the deposition temperature. The activation energy was calculated for dielectric samples and compared with the activation energy for Sr2IrO4 films.

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作者简介

I. Moskal

Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences; Moscow Institute of Physics and Technology (National Research University)

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Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 125009; Dolgoprudny, 141701

A. Petrzhik

Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences

Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 125009

Yu. Kislinskii

Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences

Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 125009

A. Shadrin

Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences; Moscow Institute of Physics and Technology (National Research University)

Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 125009; Dolgoprudny, 141701

G. Ovsyannikov

Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences

Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 125009

N. Dubitskiy

Russian Technological University – MIREA

Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 119454

参考

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2. Fig. 1. Left: a section of the X-ray diffraction pattern, which clearly shows a significant difference in the c-parameters of the obtained samples and the presence or absence of a reflection from polycrystalline Ir. Right: the c-parameter of strontium iridate determined from the diffraction patterns depending on the angle 2Ɵ. The circle is the SO2 sample, the square is SO1, the star is N1, the triangle is N2.

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3. Fig. 2. Comparison of the dependences of resistance on temperature of samples with a metallic curve, the resistance of which is about 100–150 Ohm, and a dielectric sample, the resistance of which increases to 8 MOhm with a decrease in temperature to 77 K.

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4. Fig. 3. Comparison of activation energy as a function of temperature for a SO2 sample with a dielectric resistance pattern with a Sr2IrO4 dielectric film.

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