Preparing Thin Gallium Sulphide Films via PECVD and Studying Their Properties

Мұқаба

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Рұқсат ақылы немесе тек жазылушылар үшін

Аннотация

Thin films of GaSх are obtained via plasma-enhanced chemical vapor deposition (PECVD) for the first time, while high-purity volatile derivatives of the corresponding macrocomponents (gallium chloride (GaCl3) and hydrogen sulfide (H2S)) are used as the initial materials. It is found that the nonequilibrium low-temperature plasma of an HF discharge (40.68 MHz) at a reduced pressure (0.01 Torr) is the initiator of chemical transformations. Components of reactive plasma formed in the gas phase are studied via optical emission spectroscopy (OES). Structural and electrophysical properties of the obtained materials are studied as well.

Негізгі сөздер

Авторлар туралы

L. Mochalov

Lobachevsky University

Email: knyazevav@gmail.com
603022, Nizhny Novgorod, Russia

M. Kudryashov

Nizhny Novgorod State Technical University

Email: knyazevav@gmail.com
603155, Nizhny Novgorod, Russia

A. Logunov

Lobachevsky University; Nizhny Novgorod State Technical University

Email: knyazevav@gmail.com
603022, Nizhny Novgorod, Russia; 603155, Nizhny Novgorod, Russia

M. Vshivtsev

Nizhny Novgorod State Technical University

Email: knyazevav@gmail.com
603155, Nizhny Novgorod, Russia

I. Prokhorov

Nizhny Novgorod State Technical University

Email: knyazevav@gmail.com
603155, Nizhny Novgorod, Russia

V. Vorotyntsev

Nizhny Novgorod State Technical University

Email: knyazevav@gmail.com
603155, Nizhny Novgorod, Russia

V. Malyshev

Nizhny Novgorod State Technical University

Email: knyazevav@gmail.com
603155, Nizhny Novgorod, Russia

T. Sazanova

Nizhny Novgorod State Technical University; Mendeleev University of Chemical Technology

Email: knyazevav@gmail.com
603155, Nizhny Novgorod, Russia; 125047, Moscow, Russia

Yu. Kudryashova

Lobachevsky University

Email: knyazevav@gmail.com
603022, Nizhny Novgorod, Russia

E. Bulanov

Lobachevsky University

Email: knyazevav@gmail.com
603022, Nizhny Novgorod, Russia

A. Knyazev

Lobachevsky University

Хат алмасуға жауапты Автор.
Email: knyazevav@gmail.com
603022, Nizhny Novgorod, Russia

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Қосымша файлдар


© Л.А. Мочалов, М.А. Кудряшов, А.А. Логунов, М.А. Вшивцев, И.О. Прохоров, В.М. Воротынцев, В.М. Малышев, Т.С. Сазанова, Ю.П. Кудряшова, Е.Н. Буланов, А.В. Князев, 2023