Ion implantation: nanoporous germanium

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Аннотация

The formation of thin surface amorphous layers of nanoporous Ge with various morphology during low-energy high-dose implantation by metal ions of different masses 63Cu+, 108Ag+ and 209Bi+ of monocrystalline c-Ge substrates were experimentally demonstrated by high-resolution scanning electron microscopy. Analysis of the crystallographic structure of all nanoporous germanium layers obtained was carried out by reflected backscattering electron diffraction. It was shown that at low irradiation energies, in the case of 63Cu+ and 108Ag+, needle-shaped nanoformations were created on the c-Ge surface, constituting a nanoporous Ge layer, while when using 209Bi+, the implanted layer consists of densely packed nanowires. At high energies, the morphology of thin surface layers of nanoporous germanium changes with an increase in the mass of the implanted ions from three-dimensional network to spongy with separate discharged interlacing nanowires. General possible mechanisms of pore formation in Ge during low-energy high-dose ion implantation, such as cluster-vacancy, local thermal microexplosion, and point heating accompanied by melting, are discussed.

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Авторлар туралы

A. Stepanov

Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of the RAS

Хат алмасуға жауапты Автор.
Email: aanstep@gmail.com
Ресей, Kazan

V. Nuzhdin

Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of the RAS

Email: aanstep@gmail.com
Ресей, Kazan

V. Valeev

Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of the RAS

Email: aanstep@gmail.com
Ресей, Kazan

А. Rogov

Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of the RAS

Email: aanstep@gmail.com
Ресей, Kazan

D. Konovalov

Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of the RAS

Email: aanstep@gmail.com
Ресей, Kazan

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2. Fig. 1. Concentration distribution profiles of implanted 63Cu+ ions in Ge irradiated with E = 10 (1), 20 (2), 30 (3), and 40 (4) keV.

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3. Fig. 2. SEM images of the c-Ge surface implanted with 63Cu+ ions at J = 5 μA/cm2 and D = 1.0 × 1017 ion/cm2 with different E values: (a) 10 and (b) 40 keV.

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4. Fig. 3. SEM images of the c-Ge surface implanted with 108Ag+ ions at J = 5 μA/cm2 and D = 5.0 × 1016 ion/cm2 with different E values: (a) 10 and (b) 30 keV.

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5. Fig. 4. SEM images of the surface of c-Ge implanted with 209Bi+ ions at J = 5 μA/cm2 and D = 5.0 × 1016 ion/cm2 with different values of E: (a) 15 and (b) 35 keV.

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6. Fig. 5. EBSD images of the surface of non-implanted c-Ge (a) and c-Ge irradiated with 63Cu+ ions (b).

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7. Fig. 6. Fragment of the scheme given in [17] of the surface evolution during nanostructuring of the c-Ge surface (dark gray tone) during ion implantation with increasing dose. At a certain stage of irradiation, a-Ge amorphization occurs (light gray tone). The gradual formation and growth of pores are indicated by light areas.

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8. Fig. 7. Fragment of an example image of a microexplosion on the surface of an Au film (gray atoms in the form of spheres) irradiated with 197Au+ ions at E = 20 keV.

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