Author Details
Vasil’evskii, I. S.
| Issue | Section | Title | File |
| Vol 52, No 3 (2023) | МОДЕЛИРОВАНИЕ | Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor |
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Keywords
Förster effect
bipolar transistor
charge qubit
dissociation
etching
fluorocarbon gases
gas temperature
ionization
kinetics
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power
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Keywords
Förster effect
bipolar transistor
charge qubit
dissociation
etching
fluorocarbon gases
gas temperature
ionization
kinetics
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power